V. Renard - Concepedia

Author

V. Renard

Also Known As

Okuno, H., Renard, V., Renard, V. T., Renard, Vincent T., Renard, Vincent T. F, V Renard, V. RENARD, V. Renard, V. T Renard, V. T. RENARD

Publications

963

Citations

H-Index

Concepts

All Affiliations

CEA Grenoble Commissariat à l'Énergie Atomique et aux Énergies Alternatives Centre National de la Recherche Scientifique Institut polytechnique de Grenoble Université Grenoble Alpes

About

V. Renard is an author at CEA Grenoble specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	579
2	Applied Physics	9	9	494
3	Natural Sciences	2	2	53
4	Chemistry	2	2	104
5	Chemical Engineering	1	1	85

V. Renard

Publications

835

Citations

H-Index

Page 1

	Year	Citations
Electronic Spectrum of Twisted Graphene Layers under Heterostrain Loïc Huder, Alexandre Artaud, Toai Le Quang, Physical Review Letters Materials ScienceGraphene NanomeshesNanosheetEngineeringPhysics	2018	163
Catalyst preparation for CMOS-compatible silicon nanowire synthesis V. Renard, Michaël Jublot, Patrice Gergaud, Nature Nanotechnology Chemical EngineeringEngineeringNanoelectronicsNanotechnologyNanoheterogeneous Catalysis	2009	85
Measuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations C. Dutreix, Héctor González‐Herrero, I. Brihuega, Nature Materials ScienceGraphene NanomeshesGraphene Quantum DotEngineeringPhysics	2019	78
Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2 Y. Bernard, V. Renard, P. Gonon, Microelectronic Engineering Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsSemiconductor Memory	2010	76
Heterostrain Determines Flat Bands in Magic-Angle Twisted Graphene Layers Florie Mesple, Ahmed Missaoui, Tommaso Cea, Physical Review Letters	2021	61
Beyond van der Waals Interaction: The Case of MoSe<sub>2</sub> Epitaxially Grown on Few-Layer Graphene Minh Tuan Dau, M. Gay, Daniela Di Felice, ACS Nano	2018	55
Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices Jean‐Michel Hartmann, Y. Bogumilowicz, P. Holliger, Semiconductor Science and Technology EngineeringVacuum DeviceSilicon On InsulatorWafer Scale ProcessingNanoelectronics	2003	48
Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature V. Jousseaume, J. Cuzzocrea, Nicolas Bernier, Applied Physics Letters EngineeringCarbon NanotechnologyGraphene NanomeshesCarbon-based MaterialCarbon-based Films	2011	46
Valley polarization assisted spin polarization in two dimensions V. Renard, B. A. Piot, Xavier Waintal, Nature Communications	2015	36
Large positive magnetoresistance in a high-mobility two-dimensional electron gas: Interplay of short- and long-range disorder V. Renard, Z. D. Kvon, G. M. Gusev, Physical Review B Charge ExcitationsEngineeringLow-dimensional MagnetismLarge Positive MagnetoresistanceLong-range Scattering Potentials	2004	34

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