J. F. Nodin

Fundamental variability limits of filament-based RRAM

Alessandro Grossi, E. Nowak, Cristian Zambelli et al. · 2016 · 133 citations

Engineering, Electrical Engineering, Materials Science +16

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 91 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Experimental and theoretical study of electrode effects in HfO<inf>2</inf> based RRAM

C. Cagli, Julien Buckley, V. Jousseaume et al. · 2011 · 72 citations · Full text

Engineering, Materials Engineering, Materials Science +15

N-doped GeTe as performance booster for embedded Phase-Change Memories

A. Fantini, V. Sousa, L. Perniola et al. · 2010 · 54 citations

Natural Sciences, Materials Engineering, Materials Science +10

A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing

S. Bianchi, Irene Muñoz-Martín, Erika Covi et al. · Nature Communications · 2023 · 50 citations · Full text

Computing, Autonomous Systems, Computer Science +17