N-doped GeTe as performance booster for embedded Phase-Change Memories

Abstract

The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,...), data retention is assured up to 85°C, still limited for the automotive market segment. Alternative active material able to comply with the stringent requirements of automotive applications should possibly exhibit higher crystallization temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> ) as well as higher Activation Energy (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</sub> ) with respect to GST. Recent literature shows that GeTe provides better retention, while several works put in evidence how data retention is enhanced by inclusions in pure host alloys.