E. Gourvest

Publications

662

Citations

H-Index

2009

Active since

Affiliations

Laboratoire d'Électronique des Technologies de l'Information(Current)

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

CEA Grenoble

Institut polytechnique de Grenoble

STMicroelectronics (France)

E. Gourvest is an author at Laboratoire d'Électronique des Technologies de l'Information specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceMicroelectronicsElectrical EngineeringSurface ScienceCondensed Matter PhysicsVlsi DesignMicrostructureNanoelectronics

Publications per year

2009–2017

Publications

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

S. Crémer, Nathalie Vulliet, Thierry Pinguet et al. · 2013 · 94 citations

Photonics, Soi Wafers, Optical Interconnects +15

Carbon-doped GeTe: A promising material for Phase-Change Memories

Giovanni Betti Beneventi, L. Perniola, V. Sousa et al. · Solid-State Electronics · 2011 · 90 citations · Full text

Engineering, Electronic Memory, Applied Physics +5

Impact of Oxidation on Ge2Sb2Te5and GeTe Phase-Change Properties

E. Gourvest, B. Pelissier, C. Vallée et al. · Journal of The Electrochemical Society · 2012 · 67 citations

Materials Science, Ii-vi Semiconductor, Engineering +12

N-doped GeTe as performance booster for embedded Phase-Change Memories

A. Fantini, V. Sousa, L. Perniola et al. · 2010 · 52 citations

Engineering, Computer Architecture, Phase-change Memories +17

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