High speed selfaligned GaInP/GaAs HBBTs

Abstract

High speed selfaligned Ga0.5In0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm carbon doped base layer (p = 6.5 × 1019 cm−3) and a 20 nm undoped GaInP barrier have been fabricated. The devices show maximum small signal current gains around 30, independent of emitter size. A current gain cutoff frequency of fT = 95 GHz and power gain cutoff frequency of fmax = 110 GHz are reported for 1.5 × 10 μm2 and 2 × 1.5 × 10 μm2 devices, respectively. These results represent the best microwave performance yet reported for Ga0.5In0.5P/GaAs based HBTs.