Electronics Letters · 1992 · 20 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBase Layer DesignBase ResistanceMicrowave TransistorsSheet ResistanceValence BandValence Band Structure
Tunnelling emitter bipolar transistors (TEBTs) with a 10 nm GaInP layer between emitter and base acting as a hole repelling potential barrier in the valence band have been fabricated from MOCVD grown Ga0.5In0.5P/GaAs layer structures. The carbon doped base layer (110nm, 6.5 × 1019cm-3) exhibits a base sheet resistance of 100Ω/□. DC and RF characterisation of a non-selfaligned GaAs asymmetric TEBT with fr > 40 GHz and fmax > 90 GHz are reported.
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Theory of a Wide-Gap Emitter for Transistors
H. Kroemer · Proceedings of the IRE · 1957 · 457 citations
A tunneling emitter bipolar transistor
Jingming Xu, M. S. Shur · IEEE Electron Device Letters · 1986 · 42 citations