Concepedia

Th. Lauterbach

TL

Statistics

Publications

6

Citations

123

H-Index

6

Active since

1992

Affiliations

Fraunhofer Institute for Applied Solid State Physics(Current)

Th. Lauterbach is an author at Fraunhofer Institute for Applied Solid State Physics specializing in materials science, semiconductor materials, and engineering.

Publications per year

1992–1993

6

Publications

6

Raman spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers

J. Wagner, Matthias Maier, Th. Lauterbach et al. · Physical review. B, Condensed matter · 1992 · 38 citations

, , +17

High speed non-selfaligned GaInP/GaAs-TEBT

P. Zwicknagl, U. Schaper, L. Schleicher et al. · Electronics Letters · 1992 · 20 citations

, , +15

GaAs bipolar transistors with a Ga/sub 0.5/In/sub 0.5/P hole barrier layer and carbon-doped base grown by MOVPE

Th. Lauterbach, W. Pletschen, K. H. Bachem · IEEE Transactions on Electron Devices · 1992 · 18 citations

, , +17

Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers

J. Wagner, Matthias Maier, Th. Lauterbach et al. · Applied Physics Letters · 1992 · 18 citations

, , +17

Minority-Carrier Lifetime in Heavily Doped GaAs:C

A. P. Heberle, X. Q. Zhou, W. W. Rühle et al. · Japanese Journal of Applied Physics · 1993 · 18 citations

, , +15

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