Applied Physics Letters · 1990 · 17 citations · 23 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceMaterials ChemistrySemiconductor DevicesElectron DiffractionElectron MicroscopyEpitaxial GrowthSemiconductor Device MaterialsSulfur ChemistryTransmission Electron MicroscopyCapacitance-voltage MeasurementsCapacitance-voltage ProfilingMolecular Beam EpitaxyMolecular Beam Epitaxy KineticsReflection High-energy Electron DiffractionResidual SulfurSubstrate Temperature EffectsTransmission Electron Diffraction
The application of ammonium sulfide chemical treatments for molecular beam epitaxy regrowth is examined. Reflection high-energy electron diffraction, transmission electron microscopy, and capacitance-voltage profiling techniques are used to investigate the regrown interface. A slight enhancement of the electron concentration is seen at the regrown interface due to the incorporation of residual sulfur atoms as donors. The amount of residual sulfur donors is a strong function of the substrate temperature at which regrowth is initiated.
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Nearly ideal electronic properties of sulfide coated GaAs surfaces
Eli Yablonovitch, C. J. Sandroff, R. Bhat et al. · Applied Physics Letters · 1987 · 338 citations
Natural Sciences, Materials Engineering, Materials Science +17
M. S. Carpenter, M. R. Melloch, Mark Lundstrom et al. · Applied Physics Letters · 1988 · 192 citations · Full text