Concepedia

Capacitance-voltage Profiling

Capacitance-Voltage Profiling is a semiconductor characterization technique that distinguishes itself by measuring the dependence of capacitive response on applied DC bias voltage to determine spatial carrier concentration profiles and interfacial trap states in electronic devices.

265

Publications

12.6K

Citations

1.1K

Authors

299

Institutions

Publications per year

2017–2026

36

Variants

C-v Profiling

Parents

Publications

265

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

, , +17

MOS capacitance measurements for high-leakage thin dielectrics

Kevin Yang, Chenming Hu · IEEE Transactions on Electron Devices · 1999 · 491 citations

, , +17

Delta doping of III–V compound semiconductors: Fundamentals and device applications

E. F. Schubert · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 296 citations

, , +17

Heavily doped <i>p</i>-ZnSe:N grown by molecular beam epitaxy

Jun Qiu, J. M. DePuydt, Hai‐Ping Cheng et al. · Applied Physics Letters · 1991 · 294 citations

, , +16

Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers

P. Blood · Semiconductor Science and Technology · 1986 · 274 citations

, , +17

1–5 of 265

Authors

1.1K

  1. SJ
    S. J. Pearton

    University of Florida, United States

    16 publications · 710 citations

    15

    h-index

  2. AY
    A. Y. Polyakov

    University of Florida, United States

    10 publications · 469 citations

    10

    h-index

  3. NB
    N. B. Smirnov

    University of Florida, United States

    10 publications · 469 citations

    10

    h-index

  4. EB
    E. B. Yakimov

    Institute of Microelectronics Technology and High Purity Materials, Russia

    8 publications · 377 citations

    8

    h-index

  5. EF
    E. F. Schubert

    AT&T (United States), United States

    8 publications · 771 citations

    8

    h-index

1–5 of 1.1K

Institutions

299

  1. AT&T (United States)

    Bedminster, United States

    13 h-index

    43 publications

    2.9K citations

  2. University of Florida

    Gainesville, United States

    10 h-index

    44 publications

    2.4K citations

  3. Institute of Microelectronics Technology and High Purity Materials

    Chernogolovka, Russia

    9 h-index

    21 publications

    1.8K citations

  4. National University of Science and Technology

    Moscow, Russia

    7 h-index

    48 publications

    2.7K citations

  5. University of California, Santa Barbara

    Santa Barbara, United States

    7 h-index

    18 publications

    756 citations

  6. IMEC

    Leuven, Belgium

    6 h-index

    20 publications

    373 citations

  7. Stanford University

    Stanford, United States

    6 h-index

    19 publications

    689 citations

  8. Centre National de la Recherche Scientifique

    Paris, France

    5 h-index

    16 publications

    722 citations

1–8 of 299

Venues

  1. Applied Physics Letters

    65 publications · 3.4K citations

    33

    h-index

  2. Journal of Applied Physics

    53 publications · 3.4K citations

    28

    h-index

  3. IEEE Transactions on Electron Devices

    10 publications · 780 citations

    10

    h-index

  4. IEEE Electron Device Letters

    8 publications · 464 citations

    8

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 7 publications · 233 citations

    7

    h-index

1–5