E. B. Yakimov

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov et al. · Applied Physics Letters · 2018 · 143 citations

Deep Electron, Engineering, Defect Tolerance +17

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

A. Y. Polyakov, N. B. Smirnov, Ivan Shchemerov et al. · Applied Physics Letters · 2018 · 96 citations

Materials Science, Chemical Engineering, Engineering +13

Deep level defect states in β-, α-, and <i>ɛ</i>-Ga2O3 crystals and films: Impact on device performance

A. Y. Polyakov, E. B. Yakimov, F. Ren et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2022 · 95 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +22

What is the real value of diffusion length in GaN?

E. B. Yakimov · Journal of Alloys and Compounds · 2014 · 75 citations

Engineering, Diffusion Length, Physics +5

Crystal structure, vibrational spectroscopy and optical properties of a one-dimensional organic–inorganic hybrid perovskite of [NH₃CH₂CH(NH₃)CH₂]BiCl₅

Seham K. Abdel‐Aal, Ahmed S. Abdel-Rahman, W. M. Gamal et al. · Acta Crystallographica Section B Structural Science Crystal Engineering and Materials · 2019 · 71 citations