A 5000h RF life test on 330 W RF-LDMOS transistors for radars applications

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

A. Sozza, C. Dua, E. Morvan et al. · Microelectronics Reliability · 2005 · 39 citations

Engineering, Electrical Engineering, Materials Science +14

Optimizing the hot carrier reliability of N-LDMOS transistor arrays

D. Brisbin, A. Strachan, P. Chaparala · Microelectronics Reliability · 2004 · 33 citations

Engineering, Electrical Engineering, Materials Science +14

Design for Reliability: The RF Power LDMOSFET

M.M. De Souza, Paolo Fioravanti, G. Cao et al. · IEEE Transactions on Device and Materials Reliability · 2007 · 25 citations

Engineering, Electrical Engineering, Electronic Materials +16

Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF

Hichame Maanane, Malek Masmoudi, J. Marcon et al. · Microelectronics Reliability · 2005 · 18 citations

Engineering, Electrical Engineering, Physics +14

Hot carrier reliability of RF N- LDMOS for S Band radar application

M. Gares, Hichame Maanane, Malek Masmoudi et al. · Microelectronics Reliability · 2006 · 11 citations

Engineering, Electrical Engineering, Microelectronics +15