Applied Physics Letters · 2003 · 51 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceSurface EngineeringSurface ScienceThin FilmsChemical Vapor DepositionPlasma-surface InteractionsThin Film AdhesionWafer BondingBondingInterface BondingLow-temperature BondingPlasma-assisted BondingPlasma-assisted Chemical Vapor DepositionPlasma-enhanced Chemical Vapor DepositionPlasma-enhanced DepositionThree-dimensional Integration
Low-temperature direct plasma-enhanced chemical vapor deposition (PECVD) oxide to thermal oxide bonding is described. The PECVD oxide is densified at 350 °C and chemical-mechanically polished to obtain reasonably smooth surface for bonding. The PECVD oxide wafer is bonded to the thermal oxide wafer at room temperature after piranha clean that leaves the wafer surfaces hydrophilic. A postbonding anneal at 300 °C completes the bonding. A void-free bonding interface is observed from infrared imaging and the bonding strength is estimated to be 432 mJ/m2. This bonding method can be used in a variety of applications, including three-dimensional integration.
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Bonding of silicon wafers for silicon-on-insulator
W. Maszara, Georges Goetz, A.L. Caviglia et al. · Journal of Applied Physics · 1988 · 861 citations
Andy Fan · Electrochemical and Solid-State Letters · 1999 · 213 citations