Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

Abstract

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well beyond the highest reported values of any GaN-on-Si HEMTs. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103GHz with 0.16-μm gate length, respectively, resulting in a high fT.Lg product that promises low-cost, high performance millimeter wave electronics.