R. Aidam - Concepedia

Author

R. Aidam

Fraunhofer Institute for Applied Solid State Physics

Also Known As

Aidam, R., Amine, R Aidam, R. Aidam, Rolf Aidam, Rolf J. Aidam

127

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Technische Universität Ilmenau Universidad de Cádiz Fraunhofer-Gesellschaft FZI Research Center for Information Technology

About

R. Aidam is an author at Fraunhofer Institute for Applied Solid State Physics specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	39	891
2	Applied Physics	18	31	773
3	Natural Sciences	5	5	87
4	Chemistry	5	5	73
5	Chemical Engineering	1	1	11

R. Aidam

Publications

Citations

H-Index

Page 1

	Year	Citations
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE Kathrin Frei, Raúl Trejo-Hernández, Sebastian Schütt, Japanese Journal of Applied Physics	2019	74
Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter Jürgen Däubler, T. Passow, R. Aidam, Applied Physics Letters Metamorphic Gainn BufferEngineeringOptical PropertiesMolecular Beam EpitaxyCompound Semiconductor	2014	57
GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE T. Lim, R. Aidam, Patrick Waltereit, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2010	57
Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions Martin Lindskog, Johanna Wolf, Virginie Trinité, Applied Physics Letters Optical PumpingPhotonicsQuantum ScienceDensity MatricesEngineering	2014	54
450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology A. Leuther, A. Tessmann, R. Aidam, Electrical EngineeringDb Transistor GainEngineeringRf SemiconductorSemiconductor Device	2012	38
Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors T. Lim, R. Aidam, Lutz Kirste, Applied Physics Letters Wide-bandgap SemiconductorAluminium NitrideEngineeringNanoelectronicsSheet Electron Density	2010	37
Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method K. Köhler, S. Müller, R. Aidam, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsEngineering	2010	36
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers Erdin Ture, Peter Brückner, Birte‐Julia Godejohann, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2015	35
AlGaN/GaN epitaxy and technology Patrick Waltereit, W. Bronner, R. Quay, International Journal of Microwave and Wireless Technologies Electrical EngineeringEngineeringRf SemiconductorApplied PhysicsPower Semiconductor Device	2010	33
Recent Advances in Power Scaling of GaSb-Based Semiconductor Disk Lasers P. Holl, Marcel Rattunde, Steffen Adler, IEEE Journal of Selected Topics in Quantum Electronics Optical MaterialsEngineeringLaser ScienceHeat Sink TemperatureLaser Material	2015	32

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