SiC BJT Technology for Power Switching and RF Applications

1800 V NPN bipolar junction transistors in 4H-SiC

Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of 4H-SiC power bipolar junctiontransistors

Yanbin Luo, Leonid Fursin, J.H. Zhao · Electronics Letters · 2000 · 45 citations

Engineering, Electrical Engineering, Materials Science +12

4H-SiC npn bipolar junction transistors with BV/sub CEO/ < 3,200 V

Chih‐Fang Huang, James A. Cooper · 2003 · 25 citations

Engineering, Electrical Engineering, Materials Science +12

High-voltage implanted-emitter 4H-SiC BJTs

Yi Tang, J.B. Fedison, T. Paul Chow · IEEE Electron Device Letters · 2002 · 23 citations

Engineering, Electrical Engineering, Materials Science +15