2003 · 25 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice CharacterizationSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesJunction ResistanceSilicon Carbide (Sic) MaterialsSilicon Germanium Bipolar Transistor
4H-SiC BJTs with 1.05 mm/sup 2/ and 0.0072 mm/sup 2/ active areas are fabricated. Large devices show specific on-state resistance R/sub ON,SP/ of 78 m/spl Omega/-cm/sup 2/, common emitter current gain /spl beta/ of 15, and open-base blocking voltage BV/sub CEO/ > 3,200 V at room temperature. Small devices have /spl beta/ around 20, and R/sub ON,SP/ of 28 m/spl Omega/-cm/sup 2/. R/sub ON,SP/ increases with temperature while /spl beta/ decreases. /spl beta/ also decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination in the p+ implanted base contact at implant-induced defect sites.
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1800 V NPN bipolar junction transistors in 4H-SiC
Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations