J.B. Fedison - Concepedia

Author

J.B. Fedison

Rensselaer Polytechnic Institute

Also Known As

J. B. Fedison, J. Fedison, J.B. Fedison, Jeffery B. Fedison

Publications

728

Citations

H-Index

Concepts

All Affiliations

Rensselaer Polytechnic Institute General Electric (United States)United States Naval Research Laboratory Sterling Research Group Enphase Energy (United States)

About

J.B. Fedison is an author at Rensselaer Polytechnic Institute specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	592
2	Applied Physics	12	12	582
3	Electrical Engineering	12	13	592
4	Education	1	1	24
5	Chemical Engineering	1	1	17

J.B. Fedison

Publications

659

Citations

H-Index

Page 1

	Year	Citations
SiC and GaN bipolar power devices T. Paul Chow, V. Khemka, J.B. Fedison, Solid-State Electronics Electrical EngineeringEngineeringPower DevicePower DevicesApplied Physics	2000	107
Electrical characteristics of magnesium-doped gallium nitride junction diodes J.B. Fedison, T. P. Chow, Hongqiang Lu, Applied Physics Letters SemiconductorsElectrical CharacteristicsElectrical EngineeringSemiconductor TechnologyEngineering	1998	104
C<sub>oss</sub> related energy loss in power MOSFETs used in zero-voltage-switched applications J.B. Fedison, M. Fornage, Martin J. Harrison,	2014	67
Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes M. E. Twigg, Robert E. Stahlbush, M. Fatemi, Applied Physics Letters Shear StrainEngineeringSemiconductor DeviceNanoelectronics4H-sic P-i-n Diodes	2003	61
COSS hysteresis in advanced superjunction MOSFETs J.B. Fedison, Michael J. Harrison Low-power ElectronicsElectrical EngineeringEngineeringSawyer-tower CircuitSuperjunction Mosfets	2016	56
Stacking-fault formation and propagation in 4H-SiC PiN diodes Robert E. Stahlbush, M. Fatemi, J.B. Fedison, Journal of Electronic Materials Electrical EngineeringEngineeringPower DeviceApplied PhysicsPower Semiconductor Device	2002	51
An implanted-emitter 4H-SiC bipolar transistor with high current gain Yi Tang, J.B. Fedison, T. Paul Chow IEEE Electron Device Letters Electrical EngineeringNpn Bipolar TransistorEngineeringNegative Temperature CoefficientPower Device	2001	46
Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers J.B. Fedison, N. Ramungul, T. Paul Chow, IEEE Electron Device Letters Electrical CharacteristicsElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2001	35
Stacking-fault formation and propagation in 4H-SiC PiN diodes Robert E. Stahlbush, M. Fatemi, J.B. Fedison, Journal of Electronic Materials Electrical EngineeringEngineeringPower DeviceApplied PhysicsPower Semiconductor Device	2002	31
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes Robert E. Stahlbush, J.B. Fedison, Steve Arthur, Materials science forum 4H-sic Pin DiodesElectrical EngineeringCurrent-induced Stacking FaultsForward Voltage DegradationEngineering	2002	27

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