J.B. Fedison

SiC and GaN bipolar power devices

T. Paul Chow, V. Khemka, J.B. Fedison et al. · Solid-State Electronics · 2000 · 107 citations

Electrical Engineering, Engineering, Power Device +5

Electrical characteristics of magnesium-doped gallium nitride junction diodes

J.B. Fedison, T. P. Chow, Hongqiang Lu et al. · Applied Physics Letters · 1998 · 104 citations

Semiconductors, Electrical Characteristics, Electrical Engineering +11

C_oss related energy loss in power MOSFETs used in zero-voltage-switched applications

J.B. Fedison, M. Fornage, Martin J. Harrison et al. · 2014 · 67 citations

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

M. E. Twigg, Robert E. Stahlbush, M. Fatemi et al. · Applied Physics Letters · 2003 · 61 citations

Shear Strain, Engineering, Semiconductor Device +16

COSS hysteresis in advanced superjunction MOSFETs

J.B. Fedison, Michael J. Harrison · 2016 · 56 citations

Low-power Electronics, Electrical Engineering, Engineering +12