XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

Abstract

Polycrystalline silicon thin-film transistors (poly-Si TFT's) with a high carrier mobility were fabricated at low processing temperatures of 150 and 250°C. A hydrogenated amorphous silicon (a-Si:H) film was successfully crystallized at room temperature by multistep irradiation of XeCl-308 nm excimer laser pulses without explosive evaporation of hydrogen. The poly-Si TFT's fabricated by the 250°C process had a carrier mobility of 54 cm 2 /V·s and a low potential barrier height at a grain boundary of 0.01 eV.