S. Usui - Concepedia

Author

S. Usui

Fujitsu (Japan)

Also Known As

S. Usui, SETSUO USUI, Setsuo USUI, Setsuo Usui, Setsuo Usui Setsuo Usui

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Sony Corporation (United States)Sony Computer Science Laboratories

About

S. Usui is an author at Fujitsu (Japan) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	27	2.2K
2	Applied Physics	20	26	2.2K
3	Electrical Engineering	8	8	498
4	Chemistry	4	4	142
5	Natural Sciences	2	2	97

S. Usui

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction J. Westwater, Dharam Pal Gosain, Shigetaka Tomiya, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSilicon NanowiresEngineeringElectronic MaterialsCrystalline Defects	1997	650
XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs Toshiyuki Sameshima, M. Sekiya, S. Usui Materials SciencePhotonicsAdvanced Laser ProcessingEngineeringSilicon On Insulator	1985	354
XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's Toshiyuki Sameshima, Masaki Hara, S. Usui Japanese Journal of Applied Physics EngineeringPoly-si TftFabricate Poly-si TftOptoelectronic DevicesIntegrated Circuits	1989	198
Properties of heavily doped GDSi with low resistivity S. Usui, Masanori Kikuchi Journal of Non-Crystalline Solids	1979	133
High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C Dharam Pal Gosain, Takashi Noguchi, S. Usui Japanese Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesIntegrated Circuits	2000	111
Pulsed laser-induced amorphization of silicon films Toshiyuki Sameshima, S. Usui Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesThin Film Process Technology	1991	89
Pulsed laser-induced melting followed by quenching of silicon films Toshiyuki Sameshima, S. Usui Journal of Applied Physics Materials ScienceLaser-induced MeltingEngineeringPhysicsFilm Thickness	1993	79
Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions Toshiyuki Sameshima, S. Usui, M. Sekiya Journal of Applied Physics Shallow JunctionsEngineeringLaser MaterialOptoelectronic DevicesSemiconductor Device	1987	78
Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique J. Westwater, Dharam Pal Gosain, S. Usui Japanese Journal of Applied Physics EngineeringSi NanowiresNanoengineeringNanoelectronicsMaterials Fabrication	1997	65
A new method of growing GaP crystals for light-emitting diodes K. Kaneko, Masaaki Ayabe, M. Dosen, Proceedings of the IEEE Optical MaterialsEngineeringCrystal Growth TechnologyChemistryLuminescence Property	1973	59

Page 1