M. Sekiya - Concepedia

Concepedia

Author

M. Sekiya

Fujitsu (Japan)

Also Known As

M. Sekiya, Mitsunobu Sekiya

24

Publications

1.8K

Citations

12

H-Index

45

Concepts

All Affiliations

Fujitsu (Japan)Kyushu University Sony (Japan)

MS

About

M. Sekiya is an author at Fujitsu (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	1.6K
2	Applied Physics	10	10	1.2K
3	Materials Science	9	9	1.2K
4	Electrical Engineering	7	7	793
5	Materials Engineering	1	1	78

M. Sekiya

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13

Publications

1.8K

Citations

12

H-Index

	Year	Citations
XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's Toshiyuki Sameshima, M. Sekiya IEEE Electron Device Letters Optical MaterialsEngineeringPoly-si TftLaser ApplicationsChannel Mobility	1986	443
Numerical Simulation of Viscous Flow by Smoothed Particle Hydrodynamics H. Takeda, Shoken M. Miyama, M. Sekiya Progress of Theoretical Physics Particle HydrodynamicsEngineeringFluid MechanicsParticle MethodNavier-stokes Equations	1994	373
XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs Toshiyuki Sameshima, M. Sekiya, S. Usui Materials SciencePhotonicsAdvanced Laser ProcessingEngineeringSilicon On Insulator	1985	354
24.4L: <i>Late‐News Paper</i> : A 13.0‐inch AM‐OLED Display with Top Emitting Structure and Adaptive Current Mode Programmed Pixel Circuit (TAC) Tatsuya Sasaoka, M. Sekiya, Akira Yumoto, SID Symposium Digest of Technical Papers	2001	169
High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing A Kohno, Toshiyuki Sameshima, Naoki Sano, IEEE Transactions on Electron Devices EngineeringPlasma HydrogenationThin Film Process TechnologySilicon On InsulatorPlasma Processing	1995	154
Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions Toshiyuki Sameshima, S. Usui, M. Sekiya Journal of Applied Physics Shallow JunctionsEngineeringLaser MaterialOptoelectronic DevicesSemiconductor Device	1987	78
High quality SiO/sub 2//Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere Naoki Sano, M. Sekiya, Masaki Hara, IEEE Electron Device Letters EngineeringWet AtmosphereSilicon On InsulatorSemiconductor DeviceSemiconductors	1995	51
SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors Toshiyuki Sameshima, A Kohno, M. Sekiya, Applied Physics Letters Materials ScienceEngineeringSio2 FormationOxide ElectronicsSurface Science	1994	39
Active Matrix Organic light Emitting Diode Display Based on “Super Top Emission” Technology Tadashi Ishibashi, Jiro Yamada, Takashi Hirano, Japanese Journal of Applied Physics Optical MaterialsEngineeringOrganic ElectronicsOptoelectronic DevicesPhotodetectors	2006	28
Improvement of SiO2/Si interface by low-temperature annealing in wet atmosphere Naoki Sano, M. Sekiya, Motohiro Hara, Applied Physics Letters Materials ScienceSemiconductorsSio2 FilmEngineeringOxide Electronics	1995	27

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