Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation

Abstract

Direct experimental measurements of the melt-in, resolidification, and amorphization velocities for pulsed (2.5 to 10 ns) uv and ruby-laser irradiation have been made on $〈100〉$ silicon on sapphire. An experimental value for the critical amorphization velocity in $〈100〉$ Si has been measured as 15 m/s. Epitaxial resolidification was observed from 5 to 15 m/s. Additionally, melt-in velocities in excess of 200 m/s were observed for 2.5-ns ruby irradiation.