Concepedia

Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates

Kentarou Sawano, Yoshihisa Hirose, Yusuke Ozawa, Shinji Koh, Junji Yamanaka, Kiyokazu Nakagawa, Takeo Hattori, Y. Shiraki

Japanese Journal of Applied Physics · 2003 · 28 citations · 6 references

DOI

Concepts

Abstract

Almost fully relaxed thin SiGe buffer layers that are essential for the growth of strained SiGe heterostructures are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain-relaxation ratio of the 100-nm-thick Si0.73Ge0.27 layers, which is much thinner than that of the conventional method, on the Si substrates implanted under appropriate conditions exceeds 90%. Strain relaxation is found to strongly depend on ion dose and energy, suggesting the role of implantation-induced defects in strain relaxation.

References

6

Extremely high electron mobility in Si/Ge<i>x</i>Si1−<i>x</i> structures grown by molecular beam epitaxy

Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1991 · 261 citations

, , +18

Very high mobility two-dimensional hole gas in Si/Ge<i>x</i>Si1−<i>x</i>/Ge structures grown by molecular beam epitaxy

Ya‐Hong Xie, Don Monroe, Eugene A. Fitzgerald et al. · Applied Physics Letters · 1993 · 193 citations

, , +17

Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

K. Ismail, F. K. LeGoues, K. L. Saenger et al. · Physical Review Letters · 1994 · 153 citations

, , +16

Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density

J. H. Li, Changsi Peng, Yue Wu et al. · Applied Physics Letters · 1997 · 94 citations

, , +15

Enhanced strain relaxation in Si/Ge<i>x</i>Si1−<i>x</i>/Si heterostructures via point-defect concentrations introduced by ion implantation

R. Hull, J. C. Bean, J. M. Bonar et al. · Applied Physics Letters · 1990 · 81 citations

, , +18