Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates

Abstract

Almost fully relaxed thin SiGe buffer layers that are essential for the growth of strained SiGe heterostructures are obtained by Ar ion implantation into Si substrates before SiGe molecular beam epitaxy (MBE) growth. The strain-relaxation ratio of the 100-nm-thick Si0.73Ge0.27 layers, which is much thinner than that of the conventional method, on the Si substrates implanted under appropriate conditions exceeds 90%. Strain relaxation is found to strongly depend on ion dose and energy, suggesting the role of implantation-induced defects in strain relaxation.

References

Page 1

	Year	Citations
Extremely high electron mobility in Si/Ge<i>x</i>Si1−<i>x</i> structures grown by molecular beam epitaxy Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald, Applied Physics Letters Modulation-doped Si/gexsi1−x StructureEngineeringSilicon On InsulatorSemiconductor DeviceSemiconductor Nanostructures	1991	261
Very high mobility two-dimensional hole gas in Si/Ge<i>x</i>Si1−<i>x</i>/Ge structures grown by molecular beam epitaxy Ya‐Hong Xie, Don Monroe, Eugene A. Fitzgerald, Applied Physics Letters EngineeringSilicon On InsulatorSemiconductor DeviceSemiconductor NanostructuresNanoelectronics	1993	193
Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures K. Ismail, F. K. LeGoues, K. L. Saenger, Physical Review Letters EngineeringSilicon On InsulatorHigh Electron MobilitiesSemiconductor DeviceSemiconductors	1994	153
Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density J. H. Li, Changsi Peng, Yue Wu, Applied Physics Letters Materials EngineeringMaterials ScienceDislocation DensityEpitaxial GrowthLow-temperature Si Buffers	1997	94
Enhanced strain relaxation in Si/Ge<i>x</i>Si1−<i>x</i>/Si heterostructures via point-defect concentrations introduced by ion implantation R. Hull, J. C. Bean, J. M. Bonar, Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductor DeviceIon Implantation	1990	81
Ultrahigh Electron Mobilities in Si<sub>1-x</sub>Ge<sub>x</sub>/Si/Si<sub>1-x</sub>Ge<sub>x</sub> Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy Nobuyuki Sugii, Kiyokazu Nakagawa, Yoshinobu Kimura, Japanese Journal of Applied Physics EngineeringBuffer LayerSilicon On InsulatorAbrupt Interfaces FormedSemiconductors	1998	19

Page 1