Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Akitoshi Ishizaka, Y. Shiraki · Journal of The Electrochemical Society · 1986 · 1.6K citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers

T. W. Weeks, M. D. Bremser, K. S. Ailey et al. · Applied Physics Letters · 1995 · 249 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure of GaN epitaxy on SiC using AlN buffer layers

F. A. Ponce, B. S. Krusor, J. S. Major et al. · Applied Physics Letters · 1995 · 207 citations

Engineering, Materials Engineering, Materials Science +17

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

F. A. Ponce, J. S. Major, W. E. Plano et al. · Applied Physics Letters · 1994 · 140 citations

Engineering, Materials Engineering, Materials Science +17