H. P. D. Schenk

Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

H. P. D. Schenk, M. Leroux, P. de Mierry · Journal of Applied Physics · 2000 · 84 citations

Wide-bandgap Semiconductor, Engineering, Luminescence Property +19

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

H. P. D. Schenk, M. Némoz, M. Korytov et al. · Applied Physics Letters · 2008 · 53 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +17

Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN

H. P. D. Schenk, P. de Mierry, M. Laügt et al. · Applied Physics Letters · 1999 · 50 citations

Materials Engineering, Semiconductors, Materials Science +10

Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy

Éric Frayssinet, Y. Cordier, H. P. D. Schenk et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 43 citations

Semiconductors, Materials Science, Electrical Engineering +14

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

H. P. D. Schenk, Éric Frayssinet, Alexis Bavard et al. · Journal of Crystal Growth · 2010 · 42 citations

Materials Science, Continuous Gan Layers, Electrical Engineering +7