M. Némoz

Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.

Marc Portail, Marcin Zieliński, Thierry Chassagne et al. · Journal of Applied Physics · 2009 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +17

Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates

P. de Mierry, Tobias Guehne, M. Némoz et al. · Japanese Journal of Applied Physics · 2009 · 61 citations

Engineering, Materials Engineering, Materials Science +17

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

P. de Mierry, N. Kriouche, M. Némoz et al. · Applied Physics Letters · 2010 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

H. P. D. Schenk, M. Némoz, M. Korytov et al. · Applied Physics Letters · 2008 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Stacking faults blocking process in (11−22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

N. Kriouche, P. Vennéguès, M. Némoz et al. · Journal of Crystal Growth · 2010 · 49 citations

Engineering, Materials Engineering, Materials Science +14