B. S. Krusor

Microstructure of GaN epitaxy on SiC using AlN buffer layers

F. A. Ponce, B. S. Krusor, J. S. Major et al. · Applied Physics Letters · 1995 · 207 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Phase separation in InGaN/GaN multiple quantum wells

Matthew D. McCluskey, Lucia Romano, B. S. Krusor et al. · Applied Physics Letters · 1998 · 190 citations

Materials Science, Semiconductors, Diffraction Peak +11

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

Tse Nga Ng, David E. Schwartz, Lawrence A. Lavery et al. · Scientific Reports · 2012 · 123 citations · Full text

Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

D. P. Bour, R.S. Geels, D.W. Treat et al. · IEEE Journal of Quantum Electronics · 1994 · 113 citations

Materials Science, Photonics, Spontaneous Emission +13

Structure of GaN films grown by hydride vapor phase epitaxy

Lucia Romano, B. S. Krusor, R. J. Molnar · Applied Physics Letters · 1997 · 90 citations

Materials Engineering, Materials Science, Electrical Engineering +14