W. E. Plano

Microstructure of GaN epitaxy on SiC using AlN buffer layers

F. A. Ponce, B. S. Krusor, J. S. Major et al. · Applied Physics Letters · 1995 · 207 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in Al<i>x</i>Ga1−<i>x</i> As-GaAs quantum-well heterostructures

L. J. Guido, N. Holonyak, K. C. Hsieh et al. · Journal of Applied Physics · 1987 · 150 citations

Semiconductors, Materials Science, Aluminium Nitride +14

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

F. A. Ponce, J. S. Major, W. E. Plano et al. · Applied Physics Letters · 1994 · 140 citations

Materials Science, Materials Engineering, Aluminium Nitride +14

High power diode laser arrays

John G. Endriz, Mohammad Ali Vakili, Gerald S. Browder et al. · IEEE Journal of Quantum Electronics · 1992 · 110 citations

Engineering, Laser Science, Laser Physics +19

Impurity diffusion and layer interdiffusion in Al<i>x</i>Ga1−<i>x</i>As-GaAs heterostructures

D.G. Deppe, N. Holonyak, W. E. Plano et al. · Journal of Applied Physics · 1988 · 71 citations

Semiconductors, Materials Science, Semiconductor Technology +12