Manufacturability and reliability of InP HEMTs

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance submicrometer AlInAs-GaInAs HEMT's

Umesh K. Mishra, April S. Brown, L.M. Jelloian et al. · IEEE Electron Device Letters · 1988 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal stability of AlInAs/GaInAs/InP heterostructures

N. Hayafuji, Y. Yamamoto, N. Yoshida et al. · Applied Physics Letters · 1995 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess

Meiping Tong, K. Nummila, A. Ketterson et al. · IEEE Electron Device Letters · 1992 · 38 citations

Engineering, Electrical Engineering, Materials Science +15

A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer

D. Greenberg, Jesús A. del Alamo, R. Bhat · IEEE Electron Device Letters · 1992 · 30 citations

Engineering, Electrical Engineering, Materials Science +17