L.M. Jelloian - Concepedia

Author

L.M. Jelloian

HRL Laboratories (United States)

Also Known As

L. Jelloian, L. M. Jelloian, L.M. Jelloian, Linda M. Jelloian

Publications

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)North Carolina State University Cornell University

About

L.M. Jelloian is an author at HRL Laboratories (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	956
2	Electrical Engineering	13	15	956
3	Applied Physics	10	11	843
4	Education	1	1	93
5	Materials Science	1	1	22

L.M. Jelloian

Publications

966

Citations

H-Index

Page 1

	Year	Citations
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors L.D. Nguyen, April S. Brown, M. A. Thompson, IEEE Transactions on Electron Devices SemiconductorsElectrical EngineeringElectronic DevicesGate LengthEngineering	1992	421
High-performance submicrometer AlInAs-GaInAs HEMT's Umesh K. Mishra, April S. Brown, L.M. Jelloian, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringHigh-speed ElectronicsMeasurement	1988	93
650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors L.D. Nguyen, April S. Brown, M. A. Thompson, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	1992	75
Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology Umesh K. Mishra, J.F. Jensen, April S. Brown, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignHigh-speed Electronics	1988	68
155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators S. E. Rosenbaum, B.K. Kormanyos, L.M. Jelloian, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorOscillators	1995	58
Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs Umesh K. Mishra, April S. Brown, L.M. Jelloian, Semiconductor TechnologyElectrical EngineeringEngineeringNovel High PerformanceOxide Sidewall	2003	58
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's M. Matloubian, L.M. Jelloian, April S. Brown, IEEE Transactions on Microwave Theory and Techniques Electrical Engineering4.9-Db GainEngineeringElectronic EngineeringApplied Physics	1993	36
Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT L.D. Nguyen, L.M. Jelloian, M. A. Thompson, Semiconductor TechnologyElectrical EngineeringEngineeringAlinas/gainas SaghemtsGood Pinchoff Characteristics	2002	24
Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs Lan N. Nguyen, April S. Brown, M.J. Delaney, Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsVertical Scaling	2003	24
InP-based HEMT's with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ Schottky layers L.M. Jelloian, M. Matloubian, T. Liu, IEEE Electron Device Letters Materials ScienceAluminium NitrideElectrical EngineeringEngineeringDb Gain	1994	22

Page 1