L.M. Jelloian

50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

L.D. Nguyen, April S. Brown, M. A. Thompson et al. · IEEE Transactions on Electron Devices · 1992 · 421 citations

Semiconductors, Electrical Engineering, Electronic Devices +13

High-performance submicrometer AlInAs-GaInAs HEMT's

Umesh K. Mishra, April S. Brown, L.M. Jelloian et al. · IEEE Electron Device Letters · 1988 · 93 citations

Semiconductor Technology, Electrical Engineering, Engineering +14

650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors

L.D. Nguyen, April S. Brown, M. A. Thompson et al. · IEEE Electron Device Letters · 1992 · 75 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology

Umesh K. Mishra, J.F. Jensen, April S. Brown et al. · IEEE Electron Device Letters · 1988 · 68 citations

Low-power Electronics, Electrical Engineering, Engineering +13

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

S. E. Rosenbaum, B.K. Kormanyos, L.M. Jelloian et al. · IEEE Transactions on Microwave Theory and Techniques · 1995 · 58 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +13