155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators

Abstract

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>