IEEE Transactions on Microwave Theory and Techniques · 1995 · 58 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave OscillatorsPlanar AntennasRadio-frequency Integrated CircuitsDrain SpacingFabricationGallium Nitride Microwave Integrated CircuitsMillimeter-wave Integrated CircuitsMmic OscillatorsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsQuasi-optical Oscillators
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMT's. These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 /spl mu/m. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasioptical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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B.K. Kormanyos, W. P. Harokopus, L.P.B. Katehi et al. · IEEE Transactions on Microwave Theory and Techniques · 1994 · 120 citations