N. Hayafuji - Concepedia

Author

N. Hayafuji

Mitsubishi Electric (Japan)

Also Known As

N. Hayafuji, Norio Hayafuji

Publications

567

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Electric (Germany)Setsunan University

About

N. Hayafuji is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	452
2	Applied Physics	12	17	439
3	Electrical Engineering	11	15	374
4	Materials Engineering	3	3	91
5	Chemistry	2	2	37

N. Hayafuji

Publications

502

Citations

H-Index

Page 1

	Year	Citations
Thermal stability of AlInAs/GaInAs/InP heterostructures N. Hayafuji, Y. Yamamoto, N. Yoshida, Applied Physics Letters Materials EngineeringAlinas/gainas Devices FabricationElectrical EngineeringWide-bandgap SemiconductorEngineering	1995	56
Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In<sub>x</sub>Ga<sub>1-x</sub>As-GaAs<sub>y</sub>P<sub>1-y</sub> Takashi Nishimura, Kazuo Mizuguchi, N. Hayafuji, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceEtch Pit DensitySemiconductor TechnologyEngineering	1987	52
Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si N. Hayafuji, S. Ochi, M. Miyashita, Journal of Crystal Growth Wide-bandgap SemiconductorAlgaas/gaas SuperlatticesElectrical EngineeringEngineeringDislocation Interaction	1988	50
Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation N. Hayafuji, Yoshiyuki Yamamoto, Takao Ishida, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics	1996	42
MOCVD GaAs growth on Ge (100) and Si (100) substrates K. Mizuguchi, N. Hayafuji, S. Ochi, Journal of Crystal Growth Electrical EngineeringEngineeringMocvd Gaas GrowthApplied PhysicsSemiconductor Device Fabrication	1986	41
Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si N. Hayafuji, Motoharu Miyashita, Takashi Nishimura, Japanese Journal of Applied Physics EngineeringSemiconductor DeviceSemiconductorsNanoelectronicsMolecular Beam Epitaxy	1990	35
Overview of recent development of HEMTs in the mm-wave range S. Takamiya, Naohito Yoshida, N. Hayafuji, Solid-State Electronics Electrical EngineeringEngineeringRf SemiconductorPhysicsElectronic Engineering	1995	29
Donor passivation in n-AllnAs layers by fluorine Yoshiyuki Yamamoto, N. Hayafuji, N. Fujii, Journal of Electronic Materials Surface ScienceSolid-state ChemistryMolecular CommunicationChemistryDonor Passivation	1996	24
Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing N. Hayafuji, Tatsuya Kimura, Naohito Yoshida, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsEngineering	1989	24
Manufacturability and reliability of InP HEMTs T. Sonoda, Yoshiyuki Yamamoto, N. Hayafuji, Solid-State Electronics Pressure VesselInp Hemts	1997	16

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