Concepedia

N. Hayafuji

NH

21

Publications

502

Citations

13

H-Index

1986

Active since

Affiliations

Mitsubishi Electric (Japan)(Current)

Mitsubishi Electric (Germany)

Setsunan University

N. Hayafuji is an author at Mitsubishi Electric (Japan) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringSemiconductorsOptoelectronicsMaterial ScienceMicroelectronicsCrystalline DefectsPhysicsNanoelectronics

Publications per year

1986–2002

21

Publications

21

Thermal stability of AlInAs/GaInAs/InP heterostructures

N. Hayafuji, Y. Yamamoto, N. Yoshida et al. · Applied Physics Letters · 1995 · 56 citations

Materials Engineering, Alinas/gainas Devices Fabrication, Electrical Engineering +15

Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of In<sub>x</sub>Ga<sub>1-x</sub>As-GaAs<sub>y</sub>P<sub>1-y</sub>

Takashi Nishimura, Kazuo Mizuguchi, N. Hayafuji et al. · Japanese Journal of Applied Physics · 1987 · 52 citations

Semiconductors, Materials Science, Etch Pit Density +14

Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si

N. Hayafuji, S. Ochi, M. Miyashita et al. · Journal of Crystal Growth · 1988 · 50 citations

Wide-bandgap Semiconductor, Algaas/gaas Superlattices, Electrical Engineering +5

Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation

N. Hayafuji, Yoshiyuki Yamamoto, Takao Ishida et al. · Applied Physics Letters · 1996 · 42 citations

Electrical Engineering, Semiconductor Device, Engineering +14

MOCVD GaAs growth on Ge (100) and Si (100) substrates

K. Mizuguchi, N. Hayafuji, S. Ochi et al. · Journal of Crystal Growth · 1986 · 41 citations

Electrical Engineering, Engineering, Mocvd Gaas Growth +5

Rows per page

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