T. Sonoda

Thermal stability of AlInAs/GaInAs/InP heterostructures

N. Hayafuji, Y. Yamamoto, N. Yoshida et al. · Applied Physics Letters · 1995 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE system

T. Sonoda, M. Ito, M. Kobiki et al. · Journal of Crystal Growth · 1989 · 30 citations

Engineering, Materials Engineering, Materials Science +14

Overview of recent development of HEMTs in the mm-wave range

S. Takamiya, Naohito Yoshida, N. Hayafuji et al. · Solid-State Electronics · 1995 · 29 citations

Engineering, Electrical Engineering, Electronic Materials +12

Selective wet etching for highly uniform GaAs/Al0.15Ga0.85As heterostructure field effect transistors

T. Kitano, Satoshi IZUMI, H. Minami et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Donor passivation in n-AllnAs layers by fluorine

Yoshiyuki Yamamoto, N. Hayafuji, N. Fujii et al. · Journal of Electronic Materials · 1996 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +9