Concepedia

Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE system

T. Sonoda, M. Ito, M. Kobiki, Kazuhiro Hayashi, S. Takamiya, S. Mitsui

Journal of Crystal Growth · 1989 · 30 citations · 4 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsAtomic Layer EpitaxyHeterostructure DevicesQuantum Well Growth TechniquesSynthesis Of Monolayer SemiconductorsWide-bandgap Materials Growth

References

4

Electron Transport in GaAs

D. L. Rode, Stephen Knight · Physical review. B, Solid state · 1971 · 254 citations

Natural Sciences, Electrical Engineering, Physics +17

Dielectric Breakdown in Silicon Dioxide Films on Silicon

C. M. Osburn, D. W. Ormond · Journal of The Electrochemical Society · 1972 · 106 citations

Engineering, Electrical Engineering, Materials Science +17

An automatic carrier concentration profile plotter using an electrochemical technique

T. Ambridge, M. M. Faktor · Journal of Applied Electrochemistry · 1975 · 91 citations

Natural Sciences, Chemical Engineering, Chemistry +14

Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System

T. Sonoda, Michihiro Ito, K. Segawa et al. · Japanese Journal of Applied Physics · 1988 · 16 citations

Engineering, Electrical Engineering, Materials Science +14