Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

Engineering, Materials Engineering, Materials Science +17

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations

Engineering, Materials Science, Physics +17

Molecular dynamics simulation of damage formation by cluster ion impact

Takaaki Aoki, Jiro Matsuo, Isao Yamada · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 87 citations

Natural Sciences, Materials Science, Physics +16

Advantages of Fluorine Introduction in Boron Implanted Shallow p⁺/n-Junction Formation

K. Ohyu, Toshihiko Itoga, N. Natsuaki · Japanese Journal of Applied Physics · 1990 · 66 citations

Engineering, Materials Engineering, Materials Science +16

STM observation of HOPG surfaces irradiated with Ar cluster ions

Toshio Seki, T. Kaneko, Daisuke Takeuchi et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1997 · 64 citations

Natural Sciences, Materials Science, Physics +14