On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

Dopant segregation in polycrystalline silicon

Mohammad M. Mandurah, Krishna C. Saraswat, C. R. Helms et al. · Journal of Applied Physics · 1980 · 370 citations

Materials Science, Semiconductors, Electronic Devices +12

Dielectric Anomaly and the Metal-Insulator Transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

T. G. Castner, N. K. Lee, G. S. Cieloszyk et al. · Physical Review Letters · 1975 · 189 citations

Electrical Engineering, Engineering, Dielectric Anomaly +14

Empirical approximations for the Fermi energy in a semiconductor with parabolic bands

N.G. Nilsson · Applied Physics Letters · 1978 · 89 citations

Engineering, Semiconductor Device, Semiconductors +17

Anomalous C-V characteristics of implanted poly MOS structure in n/sup +//p/sup +/ dual-gate CMOS technology

C.-Y. Lu, J.M. Sung, H.C. Kirsch et al. · IEEE Electron Device Letters · 1989 · 85 citations

Materials Engineering, Materials Science, Electrical Engineering +12

An analytical approximation for the Fermi-Dirac integral

X. Aymerich, F. Serra-Mestres, Javier Millán · Solid-State Electronics · 1981 · 70 citations

Numerical Analysis, Spectral Theory, Engineering +6