P. Habaš

Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs

P. Habaš, Zoran Prijić, D. Pantić et al. · IEEE Transactions on Electron Devices · 1996 · 61 citations

Device Modeling, Electrical Engineering, Charge-pumping Technique +14

Investigation of the physical modeling of the gate-depletion effect

P. Habaš, J. Faricelli · IEEE Transactions on Electron Devices · 1992 · 24 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13

On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling

P. Habaš, S. Selberherr · Solid-State Electronics · 1990 · 22 citations

Semiconductor Technology, Polysilicon Gate, Electrical Engineering +7

Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing

N. Seliger, P. Habaš, D. Pogány et al. · Solid-State Electronics · 1997 · 16 citations

Electrical Engineering, Engineering, Laser Science +7

Charge-pumping characteristics of virgin and stressed lightly-doped drain MOSFETs

P. Habaš · Solid-State Electronics · 1995 · 14 citations

Electrical Engineering, Engineering, Power Semiconductor Device +5