Dielectric Anomaly and the Metal-Insulator Transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

Abstract

Results from capacitance measurements on $n$-type silicon versus donor concentration show the onset of a possible divergence (polarization catastrophe) in the static dielectric constant at a critical concentration ${N}_{c}$, which is donor dependent, as ${N}_{c}$ is approached from the insulating side. A substantial deviation from Clausius-Mosotti behavior occurs as $N\ensuremath{\rightarrow}{N}_{c}$.