Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K - Concepedia

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Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

685

Citations

5

References

1968

Year

Simon M. Sze, J.C. Irvin

Solid-State Electronics

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsSemiconductor MaterialsImpurity LevelsSemiconductor MaterialSemiconductor Device

References

	Year	Citations

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