Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices · 2001 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson, P. Fini, K. D. Ness et al. · Applied Physics Letters · 2000 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

B. Jogai · Journal of Applied Physics · 2003 · 206 citations

Engineering, Electrical Engineering, Materials Science +17

Growth and passivation of AlGaN/GaN heterostructures

J. R. Shealy, T. Prunty, Eduardo M. Chumbes et al. · Journal of Crystal Growth · 2003 · 72 citations

Engineering, Materials Engineering, Materials Science +12

High-field effects in silicon nitride passivated GaN MODFETs

Dipak Kumar Sahoo, Ratnesh Lal, Hyungtak Kim et al. · IEEE Transactions on Electron Devices · 2003 · 66 citations

Engineering, Electrical Engineering, Materials Science +17