An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETs

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 683 citations

Engineering, Carrier Surface Mobilities, Electron Mobility +17

An empirical model for device degradation due to hot-carrier injection

Eiji Takeda, Norio Suzuki · IEEE Electron Device Letters · 1983 · 551 citations

Device Modeling, Electrical Engineering, Engineering +13

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Paul Heremans, R. Bellens, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1988 · 430 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +15

1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

T.H. Ning, Peter W. Cook, R.H. Dennard et al. · IEEE Transactions on Electron Devices · 1979 · 247 citations

Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors

Barry M. Doyle, Marc Bourcerie, J.-C. Marchetaux et al. · IEEE Transactions on Electron Devices · 1990 · 237 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +13