Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure

Abstract

We study the resolution limit for dot patterns using a chemically amplified negative resist by the nanometer electron beam lithography system. It is confirmed that the substrates baked at 270° C after HMDS coating are suitable for fine resist dot patterning. In addition, the post exposure bake (PEB) dependencies of sensitivity and resolution are investigated. As a result, 20-nm-diameter dot resist patterns with a 30 nm height, and 35-nm-diameter dot resist patterns with a 50 nm height are fabricated on Si substrates.