Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

Very low resistance multilayer Ohmic contact to <i>n</i>-GaN

Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations

Engineering, Materials Engineering, Materials Science +17

Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Yifeng Wu, S. Keller, P. Kozodoy et al. · IEEE Electron Device Letters · 1997 · 181 citations

Engineering, Electrical Engineering, Materials Science +17

Nonalloyed Ti/Al Ohmic contacts to <i>n</i>-type GaN using high-temperature premetallization anneal

L. F. Lester, Judith M. Brown, J. Ramer et al. · Applied Physics Letters · 1996 · 107 citations

Engineering, Materials Engineering, Materials Science +17

Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

M. Asif Khan, M. S. Shur, Q. Chen · Applied Physics Letters · 1996 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

High performance AlGaN/GaN HEMT with improved Ohmiccontacts

S.J. Cai, R. Li, Y.L. Chen et al. · Electronics Letters · 1998 · 77 citations

Engineering, Electrical Engineering, Materials Science +17