M.C.J.C.M. Krämer

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

B. Jacobs, M.C.J.C.M. Krämer, E.J. Geluk et al. · Journal of Crystal Growth · 2002 · 117 citations

Materials Engineering, Materials Science, Electrical Engineering +11

Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs

F. Karouta, M.C.J.C.M. Krämer, J.J.M. Kwaspen et al. · ECS Transactions · 2008 · 29 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process

J.J.T.M. Donkers, T. Vanhoucke, F. Vleugels et al. · 2007 · 16 citations

Engineering, Effective Emitter Area, Silicon On Insulator +18

The power conversion efficiency of visible light emitting devices in standard BiCMOS processes

P.I. Kuindersma, Jurriaan Schmitz, M. N. Vijayaraghavan et al. · 2008 · 15 citations

White Oled, Photonics, Electrical Engineering +14