T. Vanhoucke

Revised Method for Extraction of the Thermal Resistance Applied to Bulk and SOI SiGe HBTs

T. Vanhoucke, H. M. J. Boots, W.D. vanNoort · IEEE Electron Device Letters · 2004 · 55 citations

Engineering, Silicon On Insulator, Thermal Conductivity +19

QUBIC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

P. Deixler, Ted Letavic, T. Mahatdejkul et al. · 2005 · 36 citations

Engineering, Device Integration, Electronic Design +16

Unilfied electro-thermal stability criterion for bipolar transistors

T. Vanhoucke, G.A.M. Hurkx · 2005 · 30 citations

Device Modeling, Electrical Engineering, Engineering +14

A new analytical model for the thermal resistance of deep-trench bipolar transistors

T. Vanhoucke, G.A.M. Hurkx · IEEE Transactions on Electron Devices · 2006 · 24 citations

Engineering, Heat Flow, Deep-trench Bipolar Transistors +17

Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors

T. Vanhoucke, G.A.M. Hurkx, Danielle Panko et al. · Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2006 · 21 citations · Full text

Device Modeling, Semiconductor Technology, Electrical Engineering +13