Concepedia

Author

P.I. Kuindersma

Philips (Netherlands)

Also Known As

P I Kuindersma, P. I. Kuindersma, P. Kuindersma, P.I Kuindersma, P.I. Kuindersma, Piet I. Kuindersma, Piet Kuindersma

48

Publications

1.3K

Citations

14

H-Index

52

Concepts

All Affiliations

Philips (Netherlands)Philips (Finland)NXP (Netherlands)University of GroningenGhent University
PK

About

P.I. Kuindersma is an author at Philips (Netherlands) specializing in engineering, optoelectronics, and photonics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

13

16

641

2

Applied Physics

11

13

507

3

Electrical Engineering

6

6

100

4

Natural Sciences

2

2

26

5

Chemistry

1

1

15

P.I. Kuindersma

×

20

Publications

1.3K

Citations

14

H-Index

YearCitations

An introduction to InP-based generic integration technology

M.K. Smit, X.J.M. Leijtens, H.P.M.M. Ambrosius,

Semiconductor Science and Technology

2014

566

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

P.J.A. Thijs, L.F. Tiemeijer, P.I. Kuindersma,

IEEE Journal of Quantum Electronics

1991

272

Analysis of the carrier-induced FM response of DFB lasers: theoretical and experimental case studies

P. Vankwikelberge, F. Buytaert, Ann Franchois,

IEEE Journal of Quantum Electronics

1989

83

Passive FM locking in InGaAsP semiconductor lasers

L.F. Tiemeijer, P.I. Kuindersma, P.J.A. Thijs,

IEEE Journal of Quantum Electronics

1989

63

Tunable three-section, strained MQW, PA-DFB's with large single mode tuning range (72 A) and narrow linewidth (around 1 Mhz)

P.I. Kuindersma, W. Scheepers, J.M.H. Cnoops,

1990

32

Packaged, integrated DBF/EA-MOD for repeaterless transmission of 10 Gbit/s over 107 km standard fibre

P.I. Kuindersma, P.P.G. Mols, G.L.A.v.d. Hofstad,

Electronics Letters

1993

31

K2Pt(CN)4Br0.3(H2 O)2.3 a diamagnetic one-dimensional metal?

P.I. Kuindersma, G. A. Sawatzky

Solid State Communications

1973

24

Yield and device characteristics of DFB lasers: statistics and novel coating design in theory and experiment

P.P.G. Mols, P.I. Kuindersma, W. van Es-Spiekman,

IEEE Journal of Quantum Electronics

1989

24

Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers

P.J.A. Thijs, J.J.M. Binsma, L.F. Tiemeijer,

Microelectronic Engineering

1992

19

High-output-power (+15 dBm) unidirectional 1310-nm multiple-quantum-well booster amplifier module

L.F. Tiemeijer, P.J.A. Thijs, T. van Dongen,

IEEE Photonics Technology Letters

1995

17

Page 1