Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Abstract

Nonpolar m-plane (11¯00) InGaN-based light emitting diodes (LEDs) grown on low-extended defect density bulk m-plane GaN substrates offer great potential for high performance devices due to the absence of polarization-related internal electric fields. To optimize the quantum well (QW) structure, systematic sets of near blue-ultraviolet LEDs using different well widths, barrier widths, and QW periods were packaged and tested. With increasing current, high power LEDs were realized with fairly flat external quantum efficiency and blueshift-free peak wavelength for QWs with thicknesses from 8to20nm, barrier widths from 10to22nm, and QW numbers from 4 to 10.