Internal Quantum Efficiency

Internal Quantum Efficiency is a performance metric that quantifies the ratio of charge carriers collected within a optoelectronic device to the number of electron-hole pairs generated by absorbed photons, excluding losses due to reflection and transmission, thereby distinguishing it from external quantum efficiency in photodetectors, light-emitting diodes, and photovoltaic devices.

2.2K

Publications

148.3K

Citations

9.6K

Authors

1.5K

Institutions

Publications per year

2017–2026

679

Authors

9.6K

  1. XH
    Xiaoyong Huang

    Taiyuan University of Technology, China

    18 publications · 1.6K citations

    18

    h-index

  2. JS
    James S. Speck

    University of California, Santa Barbara, United States

    19 publications · 1.4K citations

    17

    h-index

  3. SP
    Steven P. DenBaars

    University of California, Santa Barbara, United States

    20 publications · 1.2K citations

    16

    h-index

  4. JY
    Jun Yeob Lee

    Sungkyunkwan University, South Korea

    19 publications · 1.1K citations

    16

    h-index

  5. YK
    Yoichi Kawakami

    Kyoto University, Japan

    19 publications · 800 citations

    16

    h-index

1–5 of 9.6K

Venues

  1. Applied Physics Letters

    374 publications · 31.3K citations

    85

    h-index

  2. Journal of Applied Physics

    173 publications · 11.1K citations

    47

    h-index

  3. Optics Express

    87 publications · 4.1K citations

    35

    h-index

  4. Nano Letters

    39 publications · 6.4K citations

    32

    h-index

  5. Advanced Optical Materials

    43 publications · 3.4K citations

    32

    h-index

1–5