Arpan Chakraborty

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

Arpan Chakraborty, B. A. Haskell, S. Keller et al. · Japanese Journal of Applied Physics · 2005 · 217 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +12

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Arpan Chakraborty, B. A. Haskell, S. Keller et al. · Applied Physics Letters · 2004 · 205 citations

Wide-bandgap Semiconductor, Dc Electroluminescence, Engineering +17

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

Michael Joseph Cich, Rafael I. Aldaz, Arpan Chakraborty et al. · Applied Physics Letters · 2012 · 113 citations

Iii–nitride Light-emitting Diodes, Experimental Results, Electrical Engineering +15

Defect reduction in nonpolar a-plane GaN films using <i>in situ</i> SiNx nanomask

Arpan Chakraborty, K. C. Kim, Feng Wu et al. · Applied Physics Letters · 2006 · 112 citations

Semiconductors, Materials Science, Electrical Engineering +12