Silicon carbide as a new MEMS technology

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Christian A. Zorman, Aaron J. Fleischman, A.S. Dewa et al. · Journal of Applied Physics · 1995 · 225 citations

Natural Sciences, Materials Engineering, Materials Science +17

Characterization of n-type beta -SiC as a piezoresistor

Joseph Shor, Daniel G. Goldstein, A. D. Kurtz · IEEE Transactions on Electron Devices · 1993 · 165 citations

Natural Sciences, Materials Engineering, Materials Science +16

Silicon Carbide Electronic Materials and Devices

Michael A. Capano, R.J. Trew · MRS Bulletin · 1997 · 148 citations

Engineering, Materials Engineering, Materials Science +12

SiC for sensors and high-temperature electronics

G. Müller, G. Krötz, E. Niemann · Sensors and Actuators A Physical · 1994 · 96 citations

Engineering, Materials Engineering, Materials Science +12

Current status of silicon carbide based high-temperature gas sensors

Ashley Lloyd, Peter S. Tobias, A. Baranzahi et al. · IEEE Transactions on Electron Devices · 1999 · 79 citations

Engineering, Materials Engineering, Materials Science +17