Applied Physics Letters · 2011 · 43 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresStrain EngineeringTransmission Electron MicroscopyEnergy Dispersive X-ray SpectroscopyEnergy-dispersive X-ray SpectroscopyGallium Nitride (Gan) MaterialsMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionReciprocal Space MappingStrain EnergyStrain Energy Density
We report on the composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors (DBRs) grown on GaN template/α-Al2O3(0001) by metal organic chemical vapor deposition. The reciprocal space mapping contours reveal that these DBRs are coherently grown. Cross-section transmission electron microscopy image of the AlGaN/AlN DBRs and the energy-dispersive x-ray analysis indicate that an AlGaN layer with gradient Al composition is located between the Al0.4Ga0.6N and AlN layers along the [0001] direction. It is attributed to the fact that Ga atoms in AlGaN are pulled and segregated to the upper layer by the strain. The density of strain energy is estimated to reduce more than one order by forming this quasi-three-sublayer structure comparing to the designed bi-sublayer structure.
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Resonant cavity enhanced photonic devices
M. Selim Ünlü, S. Strite · Journal of Applied Physics · 1995 · 670 citations
M. Asif Khan, M. Shatalov, H. P. Maruska et al. · Japanese Journal of Applied Physics · 2005 · 420 citations · Full text